to-92 plastic-encapsulate transistors 2n3904 transistor (npn) feature npn silicon epitaxial planar transistor for switching and amplifier applications as complementary type, the pnp transistor 2n3906 is recommended this transistor is also available in the sot-23 case with the type designation mmbt3904 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 0.2 a p c collector power dissipation 0.625 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 40 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 6 v collector cut-off current i cbo v cb =60v, i e =0 0.1 a collector cut-off current i ceo v ce = 40v, i b =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe1 v ce =1v, i c =10ma 100 400 h fe2 v ce =1v, i c =50ma 60 dc current gain h fe3 v ce =1v, i c =100ma 30 collector-emitter saturation voltage v ce(sat) i c =50ma, i b =5ma 0.3 v base-emitter saturation voltage v be(sat) i c =50ma, i b =5ma 0.95 v transition frequency f t v ce =20v,i c =10ma,f=100mhz 300 mh z delay time t d 35 ns rise time t r v cc =3v,v be =0.5v, i c =10ma,i b1 =1ma 35 ns storage time t s 200 ns fall time t f v cc =3v, i c =10ma i b1 =i b2 =1ma 50 ns classification of h fe1 rank o y g range 100-200 200-300 300-400 to-92 1. emitter 2. base 3. collector dongguan nanjing electronics ltd.,
10 10 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 1 10 100 100 1000 1 10 100 10 100 1000 1 10 100 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 0 2 4 6 8 10 0 20 40 60 80 100 0.1 1 10 0.1 1 10 300 70 f t i c 5 30 2 common emitter v ce =20v t a =25 collector current i c (ma) pc ta ambient temperature t a ( ) 3000 =10 v cesat i c i c v besat t a =25 t a =100 30 3 200 collector current i c (ma) common emitter v ce =1v t a =25 t a =100 300 30 30 3 200 collector current i c (ma) 200 =10 t a =100 t a =25 2n3904 typical characteristics 200 300 30 30 3 collector current i c (ma) v be i c v cb / v eb c ob / c ib ta=100 ta=25 30 3 0.3 v ce =5v base-emmiter voltage v be (v) static characteristic i c h fe common emitter t a =25 500ua 450ua 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua collector-emitter voltage v ce (v) f=1mhz i e =0/i c =0 ta=25 0.3 c ob c ib 20 3 reverse bias voltage v (v)
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